| PART |
Description |
Maker |
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| IDT70V9269L12PRF IDT70V9269L12PRFI IDT70V9279S9PRF |
32K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
16K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
From old datasheet system
Small Signal Diode
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 12 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 25 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 20 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 18 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 高.3 32K的16 SYNCHRONOU S双，端口静态内
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| AT27C256 AT27C256R AT27C256R-12 AT27C256R-12JC AT2 |
256K 32K x 8 OTP CMOS EPROM
256K (128K x 8) OTP CMOS EPROM
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SOIC -40 to 85
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDSO28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TVSOP -40 to 85
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TSSOP -40 to 85
8-Channel Analog Multiplexer/Demultiplexer 16-SSOP -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
http://
|
| P93U422-35FMB P93U422-35PMB P93U422-35SMB |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor, Corp.
Microchip Technology, Inc.
|
| CY14E256L-SZ25XCT CY14E256L-SZ45XCT |
256-Kbit (32K x 8) nvSRAM 32K X 8 NON-VOLATILE SRAM, 45 ns, PDSO32
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM)
32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| M68AW031A M68AW031AM70NS6U |
256 KBIT (32K X8) 3.0V ASYNCHRONOUS SRAM
256 Kbit (32K x8) 3.0V Asynchronous SRAM
CAC 6C 6#16S PIN PLUG
|
ST Microelectronics
意法半导
|
| W24L257 W24L257AQ-20 W24L257AJ-12 W24L257AQ-15 W24 |
32K X 8 High Speed CMOS Static RAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
32K X 8 High Speed CMOS Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
|
Winbond Electronics, Corp.
|
| HM62W16255HI HM62W16255HJPI-15 HM62W16255HTTI-15 H |
High-Speed SRAMs
4M High Speed SRAM (256-kword x 16-bit)
|
HITACHI[Hitachi Semiconductor]
|
